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dat ashee t www.rohm.com ? 2012 rohm co., ltd. all rights reserved. QS8K11 dual nch 30v 3.5a power mosfet l outline v dss 30v r ds(on) (max.) 50m w i d 3.5a p d 1.5w l features l inner circuit 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt8). 4) pb-free lead plating ; rohs compliant l packaging specifications type packaging taping l application reel size (mm) 180 dc/dc converters tape width (mm) 8 basic ordering unit (pcs) 3,000 drain - source voltage v dss 30 v taping code tr marking k11 l absolute maximum ratings (t a = 25c) parameter symbol value unit gate - source voltage v gss ? 20 v continuous drain current i d *1 ? 3.5 a pulsed drain current i d,pulse *2 ? 12 a range of storage temperature t stg - 55 to +150 c p d *3 1.5 w p d *4 0.55 w power dissipation junction temperature t j 150 c (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate * 1 esd protection diode * 2 body diode (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain tsmt8 (1) (2 ) (3 ) (4 ) (8 ) (7 ) (6 ) (5 ) 1/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 mounted on a seramic board (30300.8mm) *4 mounted on a fr4 (20200.8mm) *5 pulsed l thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *4 - - 227 c/w thermal resistance, junction - ambient r thja *3 - - 83.3 c/w l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. v breakdown voltage temperature coefficient v (br)dss t j i d = 1ma referenced to 25c - 35 - mv/c drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 30 - - m a gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = 30v, v gs = 0v - - 1 v gate threshold voltage temperature coefficient v (gs)th t j i d = 1ma referenced to 25c - - 3.3 - mv/c gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 1.0 - 2.5 static drain - source on - state resistance r ds(on) *5 v gs =10v, i d =3.5a - 35 50 - 53 75 m w v gs =4.5v, i d =3.5a - 45 65 v gs 4.0v, i d =3.5a - 50 70 v gs =10v, i d =3.5a, t j =125c w transconductance g fs *5 v ds = 10v, i d = 3.5a 2.2 4.4 - s gate input resistannce r g f = 1mhz, open drain - 2 - 2/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 180 - pf output capacitance c oss v ds = 10v - 70 - reverse transfer capacitance c rss f = 1mhz - 35 - turn - on delay time t d(on) *5 v dd ? 15v, v gs = 10v - 10 - ns rise time t r *5 i d = 1.7a - 25 - turn - off delay time t d(off) *5 r l = 8.87 w l gate charge characteristics (t a = 25c) parameter symbol conditions values - 25 - fall time t f *5 r g = 10 w - 7 - unit min. typ. max. v dd ? 15v, i d = 3.5a v gs = 5v - 3.3 - total gate charge q g *5 - 1.0 - gate - drain charge q gd *5 - 1.0 - nc v dd ? 15v, i d = 3.5a v gs = 10v - 7 - gate - source charge q gs *5 v dd ? 15v, i d = 3.5a v gs = 5v l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. a forward voltage v sd *5 v gs = 0v, i s = 3.5a - - 1.2 v inverse diode continuous, forward current i s *1 t a = 25c - - 1 3/11 2012.06 - rev.b downloaded from: http:///
QS8K11 l electrical characteristic curves 0.1 1 10 100 1000 0.0001 0.01 1 100 t a =25 oc single pulse 0.01 0.1 1 10 100 0.1 1 10 100 p w = 100 m s dc operation t a = 25oc single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds (on) ( v gs = 10v ) p w = 1ms p w = 10ms 0 20 40 60 80 100 120 0 50 100 150 200 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 t a =25 oc single pulse rth(ch -a)=100 oc /w rth(ch -a)(t)=r(t) rth(ch- a) mounted on ceramic board (30mm 30mm 0.8mm) top d=1 d=0.5 d=0.1 d=0.05 d=0.01 bottom signle fig.1 power dissipation derating curve power dissipation : p d /p d max. [%] junction temperature : tj [ c] fig.2 maximum safe operating area drain current : i d [a] drain - source voltage : v ds [v] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] fig.4 single pulse maxmum power dissipation peak transient power : p(w) pulse width : p w [s] 4/11 2012.06 - rev.b downloaded from: http:/// www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l electrical characteristic curves 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v t a =25 v gs = 2.0v v gs = 10v v gs = 4.5v v gs = 4.0v 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 v gs = 2.0v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v t a =25 fig.5 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.6 typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] 5/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l electrical characteristic curves 0 20 40 60 80 -50 0 50 100 150 v gs =0v i d =1ma 0 1 2 3 -50 0 50 100 150 v ds =10v i d =1ma fig.7 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] junction temperature : t j [ c ] fig.8 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] fig.9 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.10 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc 0.1 1 10 0.01 0.1 1 10 v ds = 10v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc 6/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l electrical characteristic curves 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 v gs =10v i d =3.5a 10 100 1000 0.01 0.1 1 10 t a =25 v gs = 4.0v v gs = 4.5v v gs = 10v 0 20 40 60 80 100 0 2 4 6 8 10 t a =25 i d = 3.5a i d = 1.75a 0 0.2 0.4 0.6 0.8 1 1.2 -25 0 25 50 75 100 125 150 fig.11 drain currentderating curve drain current dissipation : i d /i d max. (%) junction temperature : t j [oc] fig.13 static drain - source on - state resistance vs. drain current(i) static drain - source on-state resistance : r ds(on) [m w ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [m w ] gate - source voltage : v gs [v] 7/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l electrical characteristic curves 10 100 1000 0.1 1 10 v gs = 10v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc 10 100 1000 0.1 1 10 v gs = 4.5v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc 10 100 1000 0.1 1 10 v gs = 4.0v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc fig.16 static drain - source on - state resistance vs. drain current(iii) static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] fig.15 static drain - source on - state resistance vs. drain current(ii) static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] fig.17 static drain - source on - state resistance vs. drain current(iv) static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] 8/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l electrical characteristic curves fig.18 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.20 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] fig.19 switching characteristics switching time : t [ns] drain current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs = 0v t a = 125oc t a = 75oc t a = 25oc t a = - 25oc fig.21 source current vs. sourse drain voltage source current : i s [a] source-drain voltage : v sd [v] 1 10 100 1000 10000 0.01 0.1 1 10 t a =25 c v dd =15v v gs =10v r g =10 w t f t d(on) t d(off) t r 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 c v dd = 15v i d = 3.5a r g =10 w 10 100 1000 0.01 0.1 1 10 100 t a =25 c f=1mhz v gs =0v c iss c rss c oss 9/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 10/11 2012.06 - rev.b downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet QS8K11 l dimensions (unit : mm) dimension in mm/inches tsmt8 patterm of terminal position areas y s s a1 a e l1 l d h e a c lp lp1 e1 l1 b2 e l2 b e x s a min max min max a 0.75 0.85 0.03 0.033 a1 0.00 0.05 0 0.002 b 0.27 0.37 0.011 0.015 c 0.12 0.22 0.005 0.009 d 2.90 3.10 0.114 0.122 e 2.30 2.50 0.091 0.098 e h e 2.70 2.90 0.106 0.114 l 0.10 0.30 0.004 0.012 l1 0.10 0.30 0.004 0.012 lp 0.19 0.39 0.007 0.015 lp1 0.19 0.39 0.007 0.015 x - 0.10 - 0.004 y - 0.10 - 0.004 min max min max e1 b3 - 0.47 - 0.019 l1 - 0.49 - 0.019 l2 - 0.49 - 0.019 2.41 0.10 dim milimeters inches 0.65 0.03 dim milimeters inches 11/11 2012.06 - rev.b downloaded from: http:///
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, i s permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement witho ut notice. the content specied herein is for the purpose of introducing rohm's produ cts (hereinafter "products"). if you wish to use any such product, please be sure to refer to the spec ications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the periph eral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information spec ied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typica l functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispu te arising from the use of such technical information. the products specied in this document are intended to be used with general-us e electronic equipment or devices (such as audio visual equipment, ofce-automati on equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation toler ant. while rohm always makes efforts to enhance the quality and reliability of its pr oducts, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the produ cts safety measures to guard against the possibility of physical injury, re or any other damage cause d in the event of the failure of any product, such as derating, redundancy, re control and fai l-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of th e prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medic al instrument, transportation equipment, aerospace machinery, nu clear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsi bility in any way for use of any of the products for the above special purposes. if a product is intended to be used for an y such special purpose, please contact a rohm sales representative befor e purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be req uired to obtain a license or permit under the law. downloaded from: http:///

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